Aluminum Nitride Substrate
Aluminum Nitride Substrate
- Purity: 95%-99%
- Custom sizes and standard sizes in stock
- Quick Lead Time
- Competitive Price
Aluminum Nitride Substrate is a high-performance ceramic material with exceptional thermal conductivity, electronic insulation, and high-temperature resistance. It is widely applied in high-power electronic devices, LED packaging, microwave circuits, and automotive and aerospace electronic systems. As a leading supplier and manufacturer of premium alumina products, Shanghai Yuepeng can supply high-quality aluminum nitride substrates with various specifications and competitive prices, offering customized solutions to meet specific requirements.
Aluminum Nitride Substrate Data Sheet
| Reference Code: | HM1914 |
| Purity: | 95%-99% |
| Density: | 3.32 g/cm3 |
| Appearance: | Dark Gray / Light Gray / Beige |
| Dimensions: | Customized |
| Shape: | Rectangular, Round, or customized |
| Surface Finish: | Rough, Polishing, or Metallization |
Aluminum Nitride Substrate Description
Aluminum Nitride (AlN) Substrate is made of high-purity aluminum nitride ceramic. It can provide efficient thermal management in high-temperature environments, along with low dielectric loss and excellent thermal shock resistance. Shanghai Yuepeng can provide bulk molding and custom single-piece options to meet diverse industrial and research requirements, offering flexible and rapid customization of product size and scale.
Aluminum Nitride Substrate With Holes
Copper-Clad Aluminum Nitride Substrate
Aluminum Nitride Substrate Properties
| Item | Unit | AlN-170 | AlN-190 | AlN-200 | AlN-230 | |
| Density | g/cm3 | 3.3 | 3.3 | 3.28 | 3.3 | |
| Melting Point | ℃ | 2500 | 2500 | — | — | |
| Surface Roughness | μm | 0.2～0.6 | 0.3~0.5 | 0.2~0.5 | 0.2~0.6 | |
| Thermal | Thermal Conductivity | 25℃ W/(m.k) | 170-190 | 190-210 | 204 | 233 |
| Coefficient of thermal expansion | 20～300℃ (10-6/℃) | 4.6 | 4.6 | 4.0-5.0 | 4.0-5.0 | |
| Electrical | Dielectric Constant | 1 MHz, 25℃ | 8.56 | 8.56 | — | — |
| Dielectric Loss | 1 MHz, 25℃ | 4.6×10-4 | 4.6×10-4 | — | — | |
| Volume resistivity | 20℃.Ω.cm | 1.4×1014 | 1.4×1014 | >1014 | >1014 | |
| Dielectric Strength | KV/mm | ≥15 | ≥15 | >20 | >20 | |
| Mechanical | Flexural Strength | Mpa | 300-400 | 300-400 | 350 | 300 |
| Elastic Modulus | GPa | 310-320 | 310-320 | — | — | |
| Warpage | ~/25(length) | ≤3‰ | ≤3‰ | ≤3‰ | ≤3‰ | |
Aluminum Nitride Substrate Standard Specifications
| Product | Thickness | Length & Width |
| 170W Standard Product | 0.381 mm | 4×4 inch (101.6×101.6 mm) 4.5×4.5 inch (114.3×114.3 mm) 120×120 mm 5×5 inch (127×127 mm) 5.5×7.5 inch (139.7×190.5 mm) |
| 0.5 mm | ||
| 0.635 mm | ||
| 1.0 mm | ||
| 1.5 mm | ||
| 170W Non-standard Product | 0.1~0.2 mm | 2×2 inch (50.8×50.8 mm) |
| 0.2~0.3 mm | 2×2 inch (50.8×50.8 mm) 3×3 inch (76.2×76.2 mm) 4×4 inch (101.6×101.6 mm) 4.5×4.5 inch (114.3×114.3 mm) | |
| 2.0~3.0 mm | ||
| 1.0~3.0 mm | 150 mm, 200 mm, 300 mm | |
| 200W | (0.3~0.38)±0.01 mm | 4.5×4.5 inch (114.3×114.3 mm) |
| 230W | (0.3~0.38)±0.01 mm | 4.5×4.5 inch (114.3×114.3 mm) |
Aluminum Nitride Substrate Advantages
- More than 7 times the thermal conductivity of alumina.
- The thermal expansion coefficient is close to silicon, ensuring high reliability for mounting large silicon chips and withstanding thermal cycling.
- Excellent electrical insulation with a low dielectric constant.
- Superior mechanical strength compared to alumina.
- Excellent corrosion resistance to molten metals.
- Minimal impurity content, non-toxic, and highly pure.
Aluminum Nitride Substrate Applications
- Semiconductor Packaging: Aluminum nitride substrates provide high thermal conductivity and electrical insulation, making them ideal for integrated circuit packaging.
- LED Devices: Used in LED modules and chip carriers to improve heat dissipation and extend device lifespan.
- Power Electronics: Applied in high-power transistors, diodes, and IGBT modules to ensure stable operation under heavy thermal loads.
- Microwave and RF Components: Suitable for antennas, filters, and amplifiers due to low dielectric loss and excellent thermal management.
- Automotive and Aerospace Electronics: Utilized in control units, sensors, and radar systems where reliability under extreme conditions is essential.
Semiconductor Thin Films
LED and Optoelectronics
Power Electronics
Aerospace and Automotive
Aluminum Nitride Material Properties
Aluminum Nitride Material Grades
HMAN1000 is our standard high purity aluminium nitride with a thermal conductivity of 170 W/mK. This is the same thermal performance as our substrate material but offers the possibility of larger pieces in length/width and in thicknesses up to 30mm.
HMAN1000 has good coefficient of thermal expansion – matched to silicon and gallium nitride over wide temperature ranges.
HMAN100 Applications:
- High power insulators
- Laser components
- Water cooled heatsinks
- Power electronics
- Aerospace, medical and semiconductor components
HMAN1000S 170 W/mK is our standard high thermal conductivity substrate material, However, other high-performance grades are also available.
HMAN1000S Applications:
- Heat sinks
- Heat spreaders
- Laser heatsinks power rectifiers
- Aerospace, power electronics, rectifiers
HMAN2000 is one of our enhanced grades of aluminium nitride, offering all the mechanical performance of HMAN1000 with the enhanced benefits of 200 W/mK thermal conductance.
HMAN2000 Applications:
- Heat sinks
- Heat spreaders
- Laser heatsinks power rectifiers
- Aerospace, power electronics, rectifiers
HMAN3000 is one of our enhanced grades of aluminium nitride offering, all the mechanical performance of HMAN1000 with the enhanced benefits of 230 W/mK thermal conductance.
HMAN3000 Applications:
- Heat sinks
- Heat spreaders
- Laser heatsinks power rectifiers
- Aerospace, power electronics, rectifiers
HMAN4000 is one of our enhanced grades of aluminium nitride offering, all the mechanical performance of HMAN1000 with the enhanced benefits of 200 W/mK thermal conductance.
HMAN4000 Applications:
- Heat sinks
- Heat spreaders
- Laser heatsinks power rectifiers
- Aerospace, power electronics, rectifiers
Aluminum Nitride Ceramic Machining
Aluminum Nitride (AlN) ceramic machining is a precise process used to fabricate high-performance components from aluminum nitride materials. Machining aluminum nitride ceramics requires specialized equipment and techniques to handle their brittleness and hardness. Proper tooling and controlled environments are essential to avoid material damage and achieve the desired surface finish and dimensional accuracy. The common machining methods are as follows:
- Diamond Cutting: Diamond tools are used to achieve fine precision and smooth surface finishes, ideal for complex shapes.
- Laser Cutting: A non-contact method used for intricate shapes, with high precision and minimal thermal impact.
- Precision Grinding: Utilized to achieve fine tolerances and surface finishes. Requires special care to prevent cracking or chipping due to the ceramic’s brittleness.
- Wire EDM (Electrical Discharge Machining): A method often used for intricate cutting, especially for thin and complex geometries.
Aluminum Nitride Ceramic Packaging
Aluminum Nitride Ceramic products are typically packaged in vacuum-sealed bags to prevent moisture or contamination and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.
Download
Get A Quote
We will check and get back to you in 24 hours.
