Aluminum Silicon Carbide IGBT Substrate

Aluminum Silicon Carbide IGBT Substrate Data Sheet

Chemical Formula:	Al-SiC
Shape:	Substrate
Dimension:	Standard or customized

Aluminum Silicon Carbide IGBT Substrate Description

Aluminum Silicon Carbide IGBT Substrate is engineered to deliver superior thermal performance and mechanical durability required for demanding power electronics applications. By integrating aluminum’s excellent heat conduction with silicon carbide’s high hardness and low thermal expansion, this substrate effectively manages the heat generated in IGBT modules, preventing overheating and improving efficiency. Its robust structure also enhances resistance to thermal cycling and mechanical stress, ensuring long-term operational stability.

Aluminum Silicon Carbide Material Chemical Composition

Technology	Material Reference Code	Volume Fraction		Performance Advantages	Application Directions
		SiC (%)	Al (%)
RSPM + HIP (Rapid Solidification + HIP)	HMA15	15	85	☑High specific strength & stiffness ☑Low density ☑Excellent wear resistance ☑Good heat resistance	☑Lightweight and wear-resistant components ☑Alternative to aluminum alloys, cast steel, cast iron, and titanium alloys ☑Brake components, pistons, connecting rods, fighter belly fins, helicopter rotor forgings
	HMA30	30	70
	HMA40	40	60	☑High specific strength & stiffness ☑High micro-yield strength ☑Low thermal expansion ☑High thermal conductivity	☑Aerospace and defense applications ☑Optical mirrors, inertial navigation system components ☑Alternative to beryllium, glass-ceramics, quartz glass
	HMA50	50	50
Pressure Infiltration (PI)	HMA55	55	45	☑High specific modulus ☑Low density ☑Low thermal expansion ☑High thermal conductivity	☑Thermal management materials for military and civilian use ☑Military IGBT substrates, PCB substrates, heat dissipation baseplates ☑Electronic component bases and housings, power amplifier module housings and bases ☑Alternative to W/Cu, Mo/Cu, Kovar alloys
	HMA65	65	35
	HMA70	70	30

Aluminum Silicon Carbide IGBT Substrate Features

• High Thermal Conductivity: Efficiently dissipates heat generated by IGBT modules to maintain optimal operating temperatures.
• Low Coefficient of Thermal Expansion: Minimizes thermal stress and ensures dimensional stability during temperature changes.
• Excellent Mechanical Strength: Provides durability and resistance to mechanical deformation under thermal cycling.
• Lightweight Structure: Combines aluminum’s lightness with silicon carbide’s strength for easy integration without adding excessive weight.
• Customizable Dimensions: Available in various sizes and thicknesses to meet specific application requirements.

Aluminum Silicon Carbide IGBT Substrate Applications

• Power Electronics Modules: Serves as a base substrate for IGBT and MOSFET modules, offering high thermal conductivity and low thermal expansion for stable performance.
• Electric Vehicles: Used in EV inverters, motor drives, and power control units to enhance heat dissipation and improve reliability under high current loads.
• Renewable Energy Systems: Integrated into wind and solar power inverters to manage thermal stress and ensure efficient long-term operation of high-power components.
• Industrial Automation: Supports motor control and high-frequency power systems, reducing heat buildup and extending the lifespan of electronic devices.
• Aerospace and Defense Electronics: Applied in radar systems, avionics, and power distribution modules where lightweight design and superior heat management are critical.