Silicon Carbide Foam

Silicon Carbide Foam

Silicon Carbide Foam

  • Custom sizes and standard sizes in stock
  • Quick Lead Time
  • Competitive Price

Silicon Carbide Foam offers excellent filtration performance for molten metals, especially ductile and gray iron. Its high strength, thermal shock resistance, and open-cell structure allow efficient impurity removal and reduced turbulence, improving casting quality and mechanical properties. As a leading supplier and manufacturer of premium silicon carbide products, Shanghai Yuepeng can supply high-quality silicon carbide foam with various specifications and competitive prices, offering customized solutions to meet specific requirements.

Silicon Carbide Foam Data Sheet

Shape:Round, Square
Chemical CompositionSiC, Al2O3, SiO2
Porosity (%)80–90%
Pore Density (PPI)7PPI–45PPI
Operating Temperature (°C)≤1500°C
Room Temperature Bending Strength (MPa)0.8 MPa
Room Temperature Compression Strength (MPa)1.0 MPa
Thermal Shock Resistance1100°C to room temperature, 6 times
Bulk Density (g/cm³)0.4–0.5 g/cm³

Silicon Carbide Foam Description

Silicon Carbide Foam is an advanced ceramic material ideal for high-temperature filtration applications, particularly in the casting of ductile iron, gray iron, and copper-based alloys. It offers outstanding thermal shock resistance, mechanical strength, and chemical stability, allowing it to perform reliably in extreme molten metal environments. The open-cell structure enables effective removal of inclusions and impurities, while also reducing turbulence and gas content during pouring. This contributes to improved surface finish, structural integrity, and overall quality of cast components.

Silicon Carbide Foam Stock Specifications

Shape And Size (mm)CircularΦ40×15, Φ50×22, Φ60×22, Φ70×22, Φ80×22, Φ90×22, Φ100×22, Φ125×25, Φ150×30, Φ200×40
Square30×50×22, 40×40×22, 50×50×22, 75×50×22, 100×50×22, 75×75×22, 100×75×22, 100×100×22, 150×100×22, 150×150×40, 300×150×40, 125×125×30, 120×120×25
Custom DimensionsSizes can be customized to specific requirements.

Silicon Carbide Foam Filtration Capacity

Dimensions (mm)Filter Capacity(kg) (10ppi)Flow Rate (kg/s) (10ppi)Filter Capacity(kg) (20ppi)Flow Rate (kg/s) (20ppi)Filter Capacity(kg) (30ppi)Flow Rate (kg/s) (30ppi)
40×40×15644503422
50×30×22604473402
50×50×151006783.5663
50×50×2214491126955
75×50×2222014175101498
100×50×222001215591337
100×75×22300182321319911
100×100×22400243101826515
150×150×22900546984059633
200×200×30160095124058106048
Dia 40×22403392332
Dia 50×22704.5614523
Dia 60×221006.5885754
Dia 70×221408.811971026
Dia 75×221701013781176.5
Dia 80×222001115691337
Dia 90×2224014197111699
Dia 100×22280172431420812
Dia 125×22400243802232518
Dia 150×22700385483246826
Dia 200×301240679735683246

Silicon Carbide Foam Advantages

  • High Thermal Shock Resistance: Maintains structural integrity under rapid temperature changes during metal casting.
  • Excellent Filtration Efficiency: Effectively removes inclusions and impurities from molten metals.
  • High Mechanical Strength: Withstands the pressure and flow of molten metal without deformation.
  • Chemical Stability: Resistant to corrosion and chemical attack from various metal alloys.
  • Improved Casting Quality: Reduces turbulence and gas content, enhancing the final microstructure and strength of cast parts.

Silicon Carbide Foam Applications

  • Molten Metal Filtration: Removes non-metallic inclusions and impurities from molten metals such as aluminum, iron, and copper alloys, improving casting quality.
  • Catalyst Support: Serves as a high-surface-area carrier for catalysts in chemical and petrochemical industries, ensuring efficient reaction processes.
  • High-Temperature Insulation: Provides thermal stability and insulation in furnaces, kilns, and other high-heat environments.
  • Gas and Liquid Filtration: Filters corrosive gases and liquids in harsh chemical conditions, thanks to its excellent chemical resistance.
  • Energy and Environmental Applications: Used in solar energy, fuel cells, and environmental purification systems due to its durability and thermal conductivity.

Silicon Carbide Material Properties

PropertyUnitsSiC
Densityg/cm33.1
HardnessGPa28
Flexural Strength @ 25°CMPa410
Poisson’s Ratio0.14
Fracture Toughness KIcMPa m1/24.60

PropertyUnitsSiC
Thermal Conductivity @ 25°CW/mK102.6
CTE1 @ 25°C ➞ 400°C10-6/K4.02
Maximum Temperature (Inert) 2°C1900

PropertyUnitsSiC
Volume Resistivity @ 25°Cohm-cm102-1011
Volume Resistivity @ 1000°Cohm-cm0.01 – 0.2

Silicon Carbide Material Grades

Reaction bonded silicon carbide (RBSiC) is made by mixing SiC, carbon, and binder, then infiltrating with silicon at high temperature. The vapor-phase method reduces free silicon to under 10%, improving performance. The result is a silicon-silicon carbide composite (SiSiC), not pure SiC.

SiC powder + C powder + binder mixed → forming → drying → protective atmosphere for degassing → high-temperature silicon infiltration → post-processing.

Reaction Bonded SiC Advantages:

  • Low sintering temperature
  • Low production cost
  • High material densification
  • Carbon and silicon carbide framework can be pre-machined into any shape
  • Shrinkage during sintering is within 3%, aiding dimension control
  • Significant reduction in the need for finishing, ideal for large, complex components

Reaction Bonded SiC Disadvantages:

  • Residual free silicon in the sintered body after processing
  • Reduced strength compared to products from other processes
  • Decreased wear resistance
  • Free silicon is not resistant to corrosion from alkaline substances and strong acids (e.g., hydrofluoric acid)
  • Limited usage due to corrosion susceptibility
  • High-temperature strength is impacted by free silicon
  • Typical usage temperature is limited to below 1350-1400°C

Pressureless sintered silicon carbide refers to the densification sintering of samples with varying shapes and sizes at 2000–2150°C without applying external pressure and using an inert gas atmosphere, by incorporating suitable sintering additives. The sintering process can be categorized into solid-phase sintering (SSiC) and liquid-phase sintering (LSiC).

Solid-Phase Sintering SiC (SSiC) Properties:

  • High Sintering Temperature: Requires a high sintering temperature (>2000°C).
  • High Purity Requirement: The raw materials must be of high purity.
  • Low Fracture Toughness: The sintered body has lower fracture toughness and tends to undergo transgranular fracture.
  • Clean Grain Boundaries: There is essentially no liquid phase, and the grain boundaries are relatively “clean.”
  • Stable High-Temperature Strength: High-temperature strength remains stable up to 1600°C without significant changes.
  • Grain Growth: At high temperatures, grain growth is easy, leading to poor grain uniformity.
  • High Crack Sensitivity: The material is highly sensitive to crack strength.

Liquid-Phase Sintering SiC (LSiC) Properties:

  • Lower Sintering Temperature: Compared to solid-state sintering, the sintering temperature is lower.
  • Smaller Grain Size: The grain size is smaller, with better uniformity of grains.
  • Improved Fracture Toughness: Due to the introduction of a liquid phase at the grain boundaries, the fracture mode shifts to intergranular fracture, significantly improving fracture toughness.
  • Additive Influence: Uses multi-component eutectic oxides (e.g., Y2O3-Al2O3) as sintering additives, promoting densification.
  • Reduced Crack Sensitivity: Liquid-phase sintering reduces the material’s sensitivity to crack strength.
  • Weakened Interface Bonding: The introduction of the liquid phase weakens the bonding strength at the grain boundaries.

Pressureless sintered boron carbide combines high purity and the excellent mechanical properties of boron carbide for use in both ballistic armor and semiconductor manufacturing.

Hot-Pressed SiC Advantages:

  • Enables sintering at lower temperatures and shorter times, resulting in fine grains, high relative density, and good mechanical properties.
  • The simultaneous heating and pressing facilitate particle contact diffusion and mass transfer.
  • Suitable for producing silicon carbide ceramics with good mechanical performance.

Hot-Pressed SiC Disadvantages:

  • The equipment and process are complex.
  • High demands on mold material.
  • Limited to producing simple-shaped parts.
  • Low production efficiency.
  • High production costs.

Recrystallized Silicon Carbide (RSiC) is a pure silicon carbide ceramic made via high-temperature evaporation-condensation, with a porous, high-strength structure, offering excellent heat, corrosion, and thermal shock resistance, used in kiln furniture, nozzles, and chemical components.

Recrystallized SiC Properties & Applications:

  • The sintering process, based on evaporation-condensation, doesn’t cause shrinkage, preventing deformation or cracking.
  • RSiC can be shaped through methods like casting, extrusion, and pressing, and its shrinkage-free firing allows for precise dimensions.
  • After firing, recrystallized RSiC contains 10%-20% residual porosity, primarily influenced by the green body’s porosity, providing a foundation for porosity control.
  • The sintering mechanism creates interconnected pores, making RSiC suitable for applications in exhaust and air filtration.
  • RSiC has clean grain boundaries, free from glass and metal impurities, ensuring high purity and retaining SiC’s superior properties for demanding high-performance applications.

Hot Isostatic Pressed Silicon Carbide (HIPSiC) is a high-performance ceramic produced via hot isostatic pressing. Under high temperature (around 2000 ℃) and uniform high-pressure gas (typically argon), silicon carbide powder is densified into a nearly pore-free structure.

Hot Isostatic Pressed SiC Advantages:

  • Uniform mictrostructure and fine grain size
  • Low sintering temperature and time
  • High density
  • High purity and component control

Hot Isostatic Pressed SiC Disadvantages:

  • Difficult packaging technology
  • High initial investment and operational costs
  • Limited for large or complex shapes

Spark Plasma Sintering Silicon Carbide is a high-performance ceramic produced using spark plasma sintering technology. This process employs pulsed current and pressure to rapidly density silicon carbide powder at relatively low temperatures (around 1800-2000 ℃) in a short time.

Spark Plasma Sintering SiC Properties:

  • Faster heating rate
  • Lower sintering temperature
  • Shorter sintering time
  • Fine and uniform grains
  • High density
  • Appliable for small and precision parts

Silicon Carbide Ceramic Machining

Silicon Carbide Ceramic Machining

Silicon Carbide (SiC) is a highly durable ceramic material with extreme hardness (9.5 Mohs), thermal stability (up to 1650 ℃), and resistance to wear, corrosion, and high temperatures. However, machining silicon carbide presents challenges due to its extreme hardness and brittleness. Specialized techniques and tools are required to achieve precise cuts and shapes. The common machining methods include:

  • Diamond Grinding: Diamond tools are used to achieve smooth surfaces and precise shapes.
  • Laser Cutting: Suitable for cutting thin SiC materials. Laser cutting offers high precision and minimal material waste.
  • Ultrasonic Machining: This method uses high-frequency vibrations to cut and shape brittle materials like SiC without causing cracks.
  • Electrical Discharge Machining (EDM): A non-traditional method that uses electrical sparks to remove material, effective for hard ceramics like SiC.
  • Grinding With CBN Tools: Cubic boron nitride (CBN) tools can be used for grinding SiC, providing an alternative to diamond grinding for certain applications.
  • Water Jet Cutting: Using a high-pressure jet of water, sometimes with abrasive particles, to cut through SiC. This method is useful for cutting complex shapes.

Silicon Carbide Ceramic Packaging

Silicon Carbide Ceramic products are typically packaged in vacuum-sealed bags to prevent moisture or contamination and wrapped with foam to cushion vibrations and impacts during transport, ensuring the quality of products in their original condition.

ceramic packing

Get A Quote

We will check and get back to you in 24 hours.

To customize your silicon carbide foam, please provide the following details:

  1. Porosity
  2. Cell Size (PPI)
  3. Density
  4. Thickness
  5. Size and Shape
  6. Purity (Specify the purity of material required.)
  7. Quantity of the products you need
  8. Alternatively, you can provide a drawing with your specifications..

Once we have these details, we can provide you with a quote within 24 hours.

We carry a wide variety of silicon carbide products in stock, and for these, there is generally no minimum order requirement. However, for custom orders, we typically set a minimum order value of $200. The lead time for stock items is usually 1-2 weeks, while custom orders usually take 3-4 weeks, depending on the specifics of the order.

Yes, silicon carbide foam can be produced with different pore sizes, densities, and shapes to meet specific industrial requirements.

By trapping and removing non-metallic inclusions during the casting process, silicon carbide foam enhances the purity of the metal, reduces defects, and improves mechanical properties of the final product.

Shanghai Yuepeng Tech, established in 2022 in Shanghai, China, is a specialized supplier and manufacturer of silicon carbide products. With extensive expertise in supply and export, we offer competitive pricing and customized solutions tailored to specific requirements, ensuring outstanding quality and customer satisfaction. As a professional provider of refractory metals, specialty alloys, spherical powders, and various advanced materials, we serve the research, development, and large-scale industrial production needs of the scientific and industrial sectors.

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